IONISATION PAR CHOCS DANS INSB PDOBROVOL'SKIS Z; KROTKUS A.1979; LITOV. FIZ. SBOR.; SUN; DA. 1979; VOL. 19; NO 1; PP. 85-93; ABS. LIT/ENG; BIBL. 17 REF.Article

CALCUL NUMERIQUE DE LA MOBILITE DES ELECTRONS DANS L'ANTIMONIURE D'INDIUMASAUSKAS R; KROTKUS A.1981; FIZIKA I TEHNIKA POLUPROVODNIKOV; ISSN 0015-3222; SUN; DA. 1981; VOL. 15; NO 12; PP. 2327-2332; BIBL. 18 REF.Article

INFLUENCE DU CHAMP MAGNETIQUE SUR LES EFFETS D'ELECTRONS CHAUDS DANS INSBNDOBROVOL'SKIS Z; KROTKUS A.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 3; PP. 563-567; BIBL. 4 REF.Article

IONISATION PAR CHOCS DANS L'ANTIMONIURE D'INDIUM A TEMPERATURE AMBIANTEKROTKUS A; PLITNIKAS A.1979; FIZ. TEKH. POLUPROVODN.; SUN; DA. 1979; VOL. 13; NO 6; PP. 1230-1233; BIBL. 5 REF.Article

DOMAINES DE GUNN DANS INSB NDOBROVOL'SKIS Z; KROTKUS A.1977; FIZ. TEKH. POLUPROVODN.; S.S.S.R.; DA. 1977; VOL. 11; NO 7; PP. 1311-1314; BIBL. 8 REF.Article

NEGATIVE DIFFERENTIAL CONDUCTIVITY IN HYDROSTATICALLY PRESSED INDIUM ANTIMONIDE AT ROOM TEMPERATUREDOBROVOLSKIS Z; KROTKUS A; POZELA J et al.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 50; NO 1; PP. K73-K75; BIBL. 8 REF.Article

VITESSE DE DERIVE MAXIMALE DES ELECTRONS DANS L'ANTIMONIURE D'INDIUM A 77 KASAUSKAS R; DOBROVOL'SKIS Z; KROTKUS A et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 12; PP. 2323-2328; BIBL. 14 REF.Article

DETERMINATION OF THE IMPACT IONIZATION RATE OF HOLES IN TELLURIUM AT 77 KDOBROVOLSKIS Z; HOERSTEL W; KROTKUS A et al.1979; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1979; VOL. 55; NO 1; PP. 197-202; ABS. GER; BIBL. 21 REF.Article

ETUDE DE LA MAGNETORESISTANCE DES SEMICONDUCTEURS DANS DES CHAMPS ELECTRIQUES INTENSES EN HYPERFREQUENCESDOBROVOL'SKIS Z; KROTKUS A; REPSHAS K et al.1975; LITOV. FIZ. SBOR.; S.S.S.R.; DA. 1975; NO 1; PP. 73-77; ABS. LITU. ANGL.; BIBL. 3 REF.Article

Simulations and experiments of mode-locking of semiconductor lasers : pulse evolution, frequency detuning, and bias dependenceBLIXT, P; KROTKUS, A.Optical and quantum electronics. 1990, Vol 22, Num 6, pp 561-570, issn 0306-8919Article

Investigations of the preparation process for efficient second-harmonic generation in optical fibersKROTKUS, A; MARGULIS, W.Applied physics letters. 1988, Vol 52, Num 23, pp 1942-1944, issn 0003-6951Article

On the origin of the hot-electron instabilities in n-InSb at crossed electric and magnetic fieldsDOBROVOLSKIS, Z; KROTKUS, A.Applied physics. A, Solids and surfaces. 1986, Vol 39, Num 2, pp 135-139, issn 0721-7250Article

Influence des déformations élastiques sur la conductivité électrique du tellureBALINAS, V; KROTKUS, A.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 1, pp 129-132, issn 0015-3222Article

NEGATIVE DIFFERENTIAL CONDUCTIVITY AT HIGH ELECTRIC FIELDS IN INTRINSIC TELLURIUMBALYNAS V; DOBROVOLSKIS Z; HOERSTEL W et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 62; NO 1; PP. K9-K11; BIBL. 7 REF.Article

Electric field probing by picosecond laser pulsesKROTKUS, A; PASISKEVICIUS, V.Electronics Letters. 1992, Vol 28, Num 12, pp 1137-1138, issn 0013-5194Article

Domaines de Gunn dans le tellure de conductivité intrinsèqueBALINAS, V; KROTKUS, A.Fizika i tehnika poluprovodnikov. 1983, Vol 17, Num 8, pp 1482-1485, issn 0015-3222Article

CURRENT-VOLTAGE CHARACTERISTICS OF INSB AT ROOM TEMPERATURE AND HIGH HYDROSTATIC PRESSUREDOBROVOLSKIS Z; KROTKUS A; POZELA J et al.1980; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1980; VOL. 59; NO 2; PP. 689-696; ABS. GER; BIBL. 29 REF.Article

THE EFFECT OF HYDROSTATIC PRESSURE ON THE ANOMALOUS SIGN REVERSAL OF THE HALL COEFFICIENT IN TELLURIUMBALYNAS V; DOBROVOLSKIS Z; HOERSTEL W et al.1981; PHYS. STATUS SOLIDI (A), APPL. RES.; ISSN 0031-8965; DDR; DA. 1981; VOL. 64; NO 2; PP. K115-K117; BIBL. 7 REF.Article

Picosecond carrier recombination in semiconductors measured by dynamic nonlinear refractivityADOMAVICIUS, R; KROTKUS, A.Semiconductor science and technology. 2001, Vol 16, Num 2, pp 77-82, issn 0268-1242Article

INFLUENCE DE LA PRESSION SUR L'EFFET HALL DANS INAS(CR)PLITNIKAS A; KROTKUS A; BALAGUROV LA et al.1980; FIZ. TEH. POLUPROVODN.; ISSN 0015-3222; SUN; DA. 1980; VOL. 14; NO 11; PP. 2123-2127; BIBL. 10 REF.Article

Minority carrier recombination in p-type Cd_xHg_1-xTeADOMALTIS, E; GRIGORAS, K; KROTKUS, A et al.Semiconductor science and technology. 1990, Vol 5, Num 8, pp 836-841, issn 0268-1242, 6 p.Article

Conductivité électrique de trous tièdes dans un tellure avec dislocationsKROTKUS, A; HARTUNAS, Z; SHYATKUS, A et al.Fizika i tehnika poluprovodnikov. 1986, Vol 20, Num 3, pp 481-485, issn 0015-3222Article

Hot electron conduction of PbTe and Pb_1-xS_nxTeKROTKUS, A; LIDEIKIS, T; SIMKIENE, I et al.Solid-state electronics. 1983, Vol 26, Num 6, pp 605-609, issn 0038-1101Article

Enhanced drift velocity of photoelectrons in a semiconductor with ultrafast carrier recombinationREKLAITIS, A; KROTKUS, A; GRIGALIUNAITE, G et al.Semiconductor science and technology. 1999, Vol 14, Num 10, pp 945-947, issn 0268-1242Article

Photocurrent nonlinearities in ultrafast optoelectronic switchesPASISKEVICIUS, V; DERINGAS, A; KROTKUS, A et al.Applied physics letters. 1993, Vol 63, Num 16, pp 2237-2239, issn 0003-6951Article